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MOSFETs IPAN60R600P7SXKSA1
Infineon
IPAN60R600P7SXKSA1
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Diodes, Transistors and Thyristors
MOSFETs
Specification
| Product Attribute | Attribute Value |
| HTS | 8542.39.00.01 |
| PPAP | No |
| EU RoHS | Compliant |
| ECCN (US) | EAR99 |
| Packaging | Tube |
| Automotive | No |
| Part Status | Active |
| Channel Mode | Enhancement |
| Channel Type | N |
| Configuration | Single |
| Product Category | Power MOSFET |
| Typical Fall Time (ns) | 19 |
| Typical Rise Time (ns) | 6 |
| Number of Elements per Chip | 1 |
| Maximum Power Dissipation (mW) | 21000 |
| Typical Gate Charge @ 10V (nC) | 9 |
| Typical Gate Charge @ Vgs (nC) | 9@10V |
| Maximum Gate Source Voltage (V) | 20 |
| Typical Turn-On Delay Time (ns) | 7 |
| Maximum Drain Source Voltage (V) | 600 |
| Typical Turn-Off Delay Time (ns) | 37 |
| Maximum Gate Threshold Voltage (V) | 4 |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -40 |
| Maximum Continuous Drain Current (A) | 6 |
| Typical Input Capacitance @ Vds (pF) | 363@400V |
| Maximum Drain Source Resistance (MOhm) | 600@10V |
| Maximum Pulsed Drain Current @ TC=25°C (A) | 16 |
| Description |
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