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STM8S003F3P6TRATMEGA48PA-AUAT24C512C-SSHD-TSTM32L031G6U6TPS74801DRCR
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IAUZ40N06S5N050ATMA1
IAUZ40N06S5N050ATMA1
MOSFETs IAUZ40N06S5N050ATMA1
Infineon
IAUZ40N06S5N050ATMA1
--
Diodes, Transistors and Thyristors
MOSFETs
IAUZ40N06S5N050ATMA1.pdf
Specification
Product AttributeAttribute Value
PPAPUnknown
EU RoHSCompliant with Exemption
ECCN (US)EAR99
PackagingTape and Reel
AutomotiveYes
Part StatusActive
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle Quad Drain Triple Source
Product CategoryPower MOSFET
Maximum IDSS (uA)1
Process TechnologyOptiMOS 5
Typical Fall Time (ns)4.6
Typical Rise Time (ns)1
Number of Elements per Chip1
Maximum Power Dissipation (mW)71000
Typical Gate Charge @ 10V (nC)23.5
Typical Gate Charge @ Vgs (nC)23.5@10V
Maximum Gate Source Voltage (V)±20
Typical Turn-On Delay Time (ns)3.8
Maximum Drain Source Voltage (V)60
Typical Turn-Off Delay Time (ns)8.9
Maximum Gate Threshold Voltage (V)3.4
Maximum Operating Temperature (°C)175
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)86
Typical Input Capacitance @ Vds (pF)1692@30V
Maximum Drain Source Resistance (MOhm)5@10V
Maximum Gate Source Leakage Current (nA)100
Description
Trans MOSFET N-CH 60V 86A T/R
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