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STM8S003F3P6TRATMEGA48PA-AUAT24C512C-SSHD-TSTM32L031G6U6TPS74801DRCR
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IAUS165N08S5N029ATMA1
IAUS165N08S5N029ATMA1
MOSFETs IAUS165N08S5N029ATMA1
Infineon
IAUS165N08S5N029ATMA1
--
Diodes, Transistors and Thyristors
MOSFETs
IAUS165N08S5N029ATMA1.pdf
Specification
Product AttributeAttribute Value
TabTab
PPAPUnknown
SVHCYes
EU RoHSCompliant with Exemption
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count9
AutomotiveYes
PCB changed8
Part StatusActive
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle Seven Source
Package Width8.55
Package Height2.3
Package Length9.9
Product CategoryPower MOSFET
Supplier PackageHSOG
Maximum IDSS (uA)1
SVHC Exceeds ThresholdYes
Typical Fall Time (ns)29
Typical Rise Time (ns)9
Supplier Temperature GradeAutomotive
Number of Elements per Chip1
Maximum Power Dissipation (mW)167000
Typical Gate Charge @ 10V (nC)70
Typical Gate Charge @ Vgs (nC)70@10V
Maximum Gate Source Voltage (V)±20
Typical Turn-On Delay Time (ns)13
Maximum Drain Source Voltage (V)80
Typical Turn-Off Delay Time (ns)23
Maximum Gate Threshold Voltage (V)3.8
Maximum Operating Temperature (°C)175
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)165
Typical Input Capacitance @ Vds (pF)4900@40V
Maximum Drain Source Resistance (mOhm)2.9@10V
Maximum Gate Source Leakage Current (nA)100
Description
Trans MOSFET N-CH 80V 165A Automotive 9-Pin(8+Tab) HSOG T/R
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