Product Attribute | Attribute Value |
PPAP | Unknown |
EU RoHS | Compliant with Exemption |
ECCN (US) | EAR99 |
Packaging | Tape and Reel |
Automotive | Yes |
Part Status | Active |
Channel Mode | Enhancement |
Channel Type | N |
Configuration | Single Quad Drain Triple Source |
Product Category | Power MOSFET |
Maximum IDSS (uA) | 1 |
Process Technology | OptiMOS 5 |
Typical Fall Time (ns) | 2.2 |
Typical Rise Time (ns) | 1 |
Number of Elements per Chip | 1 |
Maximum Power Dissipation (mW) | 42000 |
Typical Gate Charge @ 10V (nC) | 12.7 |
Typical Gate Charge @ Vgs (nC) | 12.7@10V |
Maximum Gate Source Voltage (V) | ±16 |
Typical Turn-On Delay Time (ns) | 2.4 |
Maximum Drain Source Voltage (V) | 60 |
Typical Turn-Off Delay Time (ns) | 6.7 |
Maximum Gate Threshold Voltage (V) | 2.2 |
Maximum Operating Temperature (°C) | 175 |
Minimum Operating Temperature (°C) | -55 |
Maximum Continuous Drain Current (A) | 41 |
Typical Input Capacitance @ Vds (pF) | 927@30V |
Maximum Drain Source Resistance (MOhm) | 10@10V |
Maximum Gate Source Leakage Current (nA) | 100 |
Description |