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STM8S003F3P6TRATMEGA48PA-AUAT24C512C-SSHD-TSTM32L031G6U6TPS74801DRCR
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IAUC120N04S6L005ATMA1
IAUC120N04S6L005ATMA1
MOSFETs IAUC120N04S6L005ATMA1
Infineon
IAUC120N04S6L005ATMA1
--
Diodes, Transistors and Thyristors
MOSFETs
IAUC120N04S6L005ATMA1.pdf
Specification
Product AttributeAttribute Value
PPAPUnknown
EU RoHSCompliant with Exemption
ECCN (US)EAR99
PackagingTape and Reel
AutomotiveYes
Part StatusActive
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle Quad Drain Triple Source
Product CategoryPower MOSFET
Maximum IDSS (uA)1
Process TechnologyOptiMOS 6
Typical Fall Time (ns)28
Typical Rise Time (ns)8
Supplier Temperature GradeAutomotive
Number of Elements per Chip1
Maximum Power Dissipation (mW)187000
Typical Gate Charge @ 10V (nC)136
Typical Gate Charge @ Vgs (nC)136@10V
Maximum Gate Source Voltage (V)±16
Typical Turn-On Delay Time (ns)9
Maximum Drain Source Voltage (V)40
Typical Turn-Off Delay Time (ns)57
Maximum Gate Threshold Voltage (V)2
Maximum Operating Temperature (°C)175
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)435
Typical Input Capacitance @ Vds (pF)8423@25V
Maximum Drain Source Resistance (MOhm)0.55@10V
Maximum Gate Source Leakage Current (nA)100
Description
Trans MOSFET N-CH 40V 435A T/R
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