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IAUA250N04S6N006AUMA1
IAUA250N04S6N006AUMA1
MOSFETs IAUA250N04S6N006AUMA1
Infineon
IAUA250N04S6N006AUMA1
--
Diodes, Transistors and Thyristors
MOSFETs
Specification
Product AttributeAttribute Value
HTS8541.29.00.95
PPAPUnknown
EU RoHSCompliant with Exemption
ECCN (US)EAR99
AutomotiveYes
Part StatusNRND
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle Quad Source
Product CategoryPower MOSFET
Process TechnologyOptiMOS 6
Typical Fall Time (ns)18
Typical Rise Time (ns)9
Supplier Temperature GradeAutomotive
Number of Elements per Chip1
Maximum Power Dissipation (mW)250000
Typical Gate Charge @ 10V (nC)127
Typical Gate Charge @ Vgs (nC)127@10V
Maximum Gate Source Voltage (V)±20
Typical Turn-On Delay Time (ns)14
Maximum Drain Source Voltage (V)40
Typical Turn-Off Delay Time (ns)35
Maximum Operating Temperature (°C)175
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)450
Operating Junction Temperature (°C)-55 to 175
Typical Input Capacitance @ Vds (pF)8318@25V
Maximum Drain Source Resistance (mOhm)0.64@10V
Description
Trans MOSFET N-CH 40V 450A T/R
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