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MOSFETs GRP-DATA-JANSR2N7555U3
Infineon
GRP-DATA-JANSR2N7555U3
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Diodes, Transistors and Thyristors
MOSFETs
Specification
| Product Attribute | Attribute Value |
| PPAP | No |
| EU RoHS | Supplier Unconfirmed |
| Mounting | Surface Mount |
| ECCN (US) | EAR99 |
| Pin Count | 3 |
| Automotive | No |
| PCB changed | 3 |
| Part Status | Active |
| Channel Mode | Enhancement |
| Channel Type | N |
| Configuration | Single |
| Package Width | 10.28(Max) |
| Package Height | 2.61(Max) |
| Package Length | 7.64(Max) |
| Product Category | Power MOSFET |
| Supplier Package | SMD-0.5 |
| Maximum IDSS (uA) | 10 |
| Process Technology | R5 |
| Typical Fall Time (ns) | 30(Max) |
| Typical Rise Time (ns) | 100(Max) |
| Supplier Temperature Grade | Military |
| Number of Elements per Chip | 1 |
| Maximum Power Dissipation (mW) | 75000 |
| Typical Gate Charge @ Vgs (nC) | 32(Max)@12V |
| Maximum Gate Source Voltage (V) | ±20 |
| Typical Turn-On Delay Time (ns) | 25(Max) |
| Maximum Drain Source Voltage (V) | 250(Min) |
| Typical Turn-Off Delay Time (ns) | 35(Max) |
| Maximum Gate Threshold Voltage (V) | 4.5 |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Continuous Drain Current (A) | 10 |
| Typical Input Capacitance @ Vds (pF) | 1016@25V |
| Maximum Drain Source Resistance (MOhm) | 400@12V |
| Maximum Gate Source Leakage Current (nA) | 100 |
| Description |
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