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FQT2P25TF
FQT2P25TF
MOSFETs FQT2P25TF
onsemi
FQT2P25TF
--
Diodes, Transistors and Thyristors
MOSFETs
FQT2P25TF.pdf
Specification
Product AttributeAttribute Value
HTS8541.29.00.95
TabTab
PPAPNo
SVHCYes
EU RoHSCompliant with Exemption
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count4
AutomotiveNo
Lead ShapeGull-wing
PCB changed3
Part StatusLTB
Channel ModeEnhancement
Channel TypeP
ConfigurationSingle Dual Drain
Package Width3.5
Package Height1.69(Max)
Package Length6.5
Product CategoryPower MOSFET
Supplier PackageSOT-223
Maximum IDSS (uA)1
Process TechnologyDMOS
Standard Package NameSOT
SVHC Exceeds ThresholdYes
Typical Fall Time (ns)25
Typical Rise Time (ns)40
Number of Elements per Chip1
Maximum Power Dissipation (mW)2500
Typical Gate Charge @ 10V (nC)6.5
Typical Gate Charge @ Vgs (nC)6.5@10V
Maximum Gate Source Voltage (V)±30
Typical Turn-On Delay Time (ns)8.5
Maximum Drain Source Voltage (V)250
Typical Turn-Off Delay Time (ns)12
Maximum Gate Threshold Voltage (V)5
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)0.55
Typical Input Capacitance @ Vds (pF)190@25V
Maximum Drain Source Resistance (mOhm)4000@10V
Maximum Gate Source Leakage Current (nA)100
Description
Trans MOSFET P-CH 250V 0.55A 4-Pin(3+Tab) SOT-223 T/R
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