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FQB33N10TM
FQB33N10TM
MOSFETs FQB33N10TM
onsemi
FQB33N10TM
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Diodes, Transistors and Thyristors
MOSFETs
FQB33N10TM.pdf
Specification
Product AttributeAttribute Value
HTS8541.29.00.95
TabTab
PPAPNo
SVHCYes
EU RoHSCompliant with Exemption
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count3
AutomotiveNo
Lead ShapeGull-wing
PCB changed2
Part StatusObsolete
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle
Package Width9.65(Max)
Package Height4.83(Max)
Package Length10.67(Max)
Product CategoryPower MOSFET
Supplier PackageD2PAK
Process TechnologyDMOS
Standard Package NameTO-263
SVHC Exceeds ThresholdYes
Typical Fall Time (ns)110
Typical Rise Time (ns)195
Number of Elements per Chip1
Maximum Power Dissipation (mW)3750
Typical Gate Charge @ 10V (nC)38
Typical Gate Charge @ Vgs (nC)38@10V
Maximum Gate Source Voltage (V)±25
Typical Turn-On Delay Time (ns)15
Maximum Drain Source Voltage (V)100
Typical Turn-Off Delay Time (ns)80
Maximum Operating Temperature (°C)175
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)33
Typical Input Capacitance @ Vds (pF)1150@25V
Maximum Drain Source Resistance (mOhm)52@10V
Description
Trans MOSFET N-CH 100V 33A 3-Pin(2+Tab) D2PAK T/R
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