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FQA19N60
FQA19N60
MOSFETs FQA19N60
onsemi
FQA19N60
--
Diodes, Transistors and Thyristors
MOSFETs
FQA19N60.pdf
Specification
Product AttributeAttribute Value
TabTab
PPAPNo
SVHCYes
EU RoHSCompliant with Exemption
MountingThrough Hole
ECCN (US)EAR99
PackagingTube
Pin Count3
AutomotiveNo
Lead ShapeThrough Hole
PCB changed3
Part StatusObsolete
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle
Package Width5(Max)
Package Height18.9(Max)
Package Length16.2(Max)
Product CategoryPower MOSFET
Supplier PackageTO-3P
Process TechnologyDMOS
Standard Package NameTO-3P
Typical Fall Time (ns)135
Typical Rise Time (ns)210
Number of Elements per Chip1
Maximum Power Dissipation (mW)300000
Typical Gate Charge @ 10V (nC)70
Typical Gate Charge @ Vgs (nC)70@10V
Maximum Gate Source Voltage (V)±30
Typical Turn-On Delay Time (ns)65
Maximum Drain Source Voltage (V)600
Typical Turn-Off Delay Time (ns)150
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)18.5
Typical Input Capacitance @ Vds (pF)2800@25V
Maximum Drain Source Resistance (mOhm)380@10V
Description
Trans MOSFET N-CH 600V 18.5A 3-Pin(3+Tab) TO-3P Tube
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