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FQA11N90C
FQA11N90C
MOSFETs FQA11N90C
onsemi
FQA11N90C
--
Diodes, Transistors and Thyristors
MOSFETs
FQA11N90C.pdf
Specification
Product AttributeAttribute Value
TabTab
EU RoHSCompliant with Exemption
MountingThrough Hole
ECCN (US)EAR99
Pin Count3
AutomotiveUnknown
Lead ShapeThrough Hole
PCB changed3
Part StatusObsolete
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle
Package Width5(Max)
Package Height18.9(Max)
Package Length16.2(Max)
Product CategoryPower MOSFET
Supplier PackageTO-3PN
Maximum IDSS (uA)10
Process TechnologyDMOS
Standard Package NameTO-3P
Typical Fall Time (ns)85
Typical Rise Time (ns)130
Number of Elements per Chip1
Maximum Power Dissipation (mW)300000
Typical Gate Charge @ 10V (nC)60
Typical Gate Charge @ Vgs (nC)60@10V
Maximum Gate Source Voltage (V)±30
Typical Turn-On Delay Time (ns)60
Maximum Drain Source Voltage (V)900
Typical Turn-Off Delay Time (ns)130
Maximum Gate Threshold Voltage (V)5
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)11
Typical Input Capacitance @ Vds (pF)2530@25V
Maximum Drain Source Resistance (MOhm)1400@10V
Maximum Gate Source Leakage Current (nA)100
Description
Trans MOSFET N-CH 900V 11A 3-Pin(3+Tab) TO-3PN
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