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FDV302P
FDV302P
MOSFETs FDV302P
onsemi
FDV302P
--
Diodes, Transistors and Thyristors
MOSFETs
FDV302P.pdf
Specification
Product AttributeAttribute Value
HTS8541.29.00.95
PPAPNo
EU RoHSCompliant
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count3
AutomotiveNo
Lead ShapeGull-wing
PCB changed3
Part StatusLTB
Channel ModeEnhancement
Channel TypeP
ConfigurationSingle
Package Width1.3
Package Height0.94
Package Length2.9
Product CategoryPower MOSFET
Supplier PackageSOT-23
Maximum IDSS (uA)1
Process TechnologyDMOS
Standard Package NameSOT
Typical Fall Time (ns)5
Typical Rise Time (ns)8
Number of Elements per Chip1
Maximum Power Dissipation (mW)350
Typical Gate Charge @ 10V (nC)0.22
Typical Gate Charge @ Vgs (nC)0.22@4.5V
Maximum Gate Source Voltage (V)8
Typical Output Capacitance (pF)7
Typical Turn-On Delay Time (ns)5
Maximum Drain Source Voltage (V)25
Typical Gate Plateau Voltage (V)3
Typical Turn-Off Delay Time (ns)9
Maximum Diode Forward Voltage (V)1.5
Typical Diode Forward Voltage (V)1
Typical Gate to Drain Charge (nC)0.04
Maximum Gate Threshold Voltage (V)1.5
Minimum Gate Threshold Voltage (V)0.65
Typical Gate Threshold Voltage (V)1
Typical Gate to Source Charge (nC)0.11
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)0.12
Operating Junction Temperature (°C)-55 to 150
Typical Input Capacitance @ Vds (pF)11@10V
Maximum Drain Source Resistance (mOhm)10000@4.5V
Maximum Gate Source Leakage Current (nA)100
Maximum Positive Gate Source Voltage (V)8
Maximum Pulsed Drain Current @ TC=25°C (A)0.5
Typical Reverse Transfer Capacitance @ Vds (pF)1.4@10V
Description
Trans MOSFET P-CH 25V 0.12A 3-Pin SOT-23 T/R
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