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FDT86246L
FDT86246L
MOSFETs FDT86246L
onsemi
FDT86246L
--
Diodes, Transistors and Thyristors
MOSFETs
FDT86246L.pdf
Specification
Product AttributeAttribute Value
TabTab
PPAPNo
SVHCYes
EU RoHSCompliant with Exemption
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count4
AutomotiveNo
Lead ShapeGull-wing
PCB changed3
Part StatusActive
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle
Package Width3.5
Package Height1.69(Max)
Package Length6.5
Product CategoryPower MOSFET
Supplier PackageSOT-223
Maximum IDSS (uA)1
Process TechnologyTMOS
Standard Package NameSOT
SVHC Exceeds ThresholdYes
Typical Fall Time (ns)2
Typical Rise Time (ns)1.3
Number of Elements per Chip1
Maximum Power Dissipation (mW)2200
Typical Gate Charge @ 10V (nC)4.5
Typical Gate Charge @ Vgs (nC)4.5@10V|2.3@4.5V
Maximum Gate Source Voltage (V)±20
Typical Turn-On Delay Time (ns)4.5
Maximum Drain Source Voltage (V)150
Typical Turn-Off Delay Time (ns)11
Maximum Gate Threshold Voltage (V)2.5
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)2
Typical Input Capacitance @ Vds (pF)238@75V
Maximum Drain Source Resistance (mOhm)228@10V
Maximum Gate Source Leakage Current (nA)100
Description
Trans MOSFET N-CH 150V 2A 4-Pin(3+Tab) SOT-223 T/R
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