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FDS5351
FDS5351
MOSFETs FDS5351
onsemi
FDS5351
--
Diodes, Transistors and Thyristors
MOSFETs
FDS5351.pdf
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSCompliant
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count8
AutomotiveNo
Lead ShapeGull-wing
PCB changed8
Part StatusActive
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle Quad Drain Triple Source
Package Width3.9
Package Height1.5(Max)
Package Length4.9
Product CategoryPower MOSFET
Supplier PackageSOIC
Maximum IDSS (uA)1
Process TechnologyPowerTrench
Standard Package NameSOP
Typical Fall Time (ns)2
Typical Rise Time (ns)3
Number of Elements per Chip1
Maximum Power Dissipation (mW)5000
Typical Gate Charge @ 10V (nC)19
Typical Gate Charge @ Vgs (nC)9@4.5V|19@10V
Maximum Gate Source Voltage (V)±20
Typical Output Capacitance (pF)90
Typical Turn-On Delay Time (ns)8
Maximum Drain Source Voltage (V)60
Typical Gate Plateau Voltage (V)3
Typical Turn-Off Delay Time (ns)21
Maximum Diode Forward Voltage (V)1.3
Typical Diode Forward Voltage (V)0.82
Typical Gate to Drain Charge (nC)3.5
Maximum Gate Threshold Voltage (V)3
Minimum Gate Threshold Voltage (V)1
Typical Gate Threshold Voltage (V)2
Typical Gate to Source Charge (nC)3
Typical Reverse Recovery Time (ns)24
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)6.1
Operating Junction Temperature (°C)-55 to 150
Typical Input Capacitance @ Vds (pF)985@30V
Typical Reverse Recovery Charge (nC)15
Maximum Drain Source Resistance (mOhm)35@10V
Maximum Gate Source Leakage Current (nA)100
Maximum Positive Gate Source Voltage (V)20
Maximum Pulsed Drain Current @ TC=25°C (A)30
Maximum Power Dissipation on PCB @ TC=25°C (W)5
Typical Reverse Transfer Capacitance @ Vds (pF)50@30V
Maximum Junction Ambient Thermal Resistance on PCB (°C/W)125
Description
Trans MOSFET N-CH 60V 6.1A 8-Pin SOIC T/R
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