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FDN86501LZ
FDN86501LZ
MOSFETs FDN86501LZ
onsemi
FDN86501LZ
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Diodes, Transistors and Thyristors
MOSFETs
FDN86501LZ.pdf
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSCompliant
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count3
AutomotiveNo
Lead ShapeGull-wing
PCB changed3
Part StatusActive
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle
Package Width1.4
Package Height0.94
Package Length2.92
Product CategoryPower MOSFET
Supplier PackageSOT-23
Maximum IDSS (uA)1
Process TechnologyPowerTrench
Standard Package NameSOT
Typical Fall Time (ns)1.2
Typical Rise Time (ns)1.2
Number of Elements per Chip1
Maximum Power Dissipation (mW)1500
Typical Gate Charge @ 10V (nC)3.8
Typical Gate Charge @ Vgs (nC)3.8@10V|1.9@4.5V
Maximum Gate Source Voltage (V)±20
Typical Turn-On Delay Time (ns)4.4
Maximum Drain Source Voltage (V)60
Typical Turn-Off Delay Time (ns)9.6
Maximum Gate Threshold Voltage (V)2.4
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)2.6
Typical Input Capacitance @ Vds (pF)236@30V
Maximum Drain Source Resistance (mOhm)116@10V
Maximum Gate Source Leakage Current (nA)10000
Description
Trans MOSFET N-CH 60V 2.6A 3-Pin SOT-23 T/R
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