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FDMS86550
FDMS86550
MOSFETs FDMS86550
onsemi
FDMS86550
--
Diodes, Transistors and Thyristors
MOSFETs
FDMS86550.pdf
Specification
Product AttributeAttribute Value
PPAPNo
SVHCYes
EU RoHSCompliant with Exemption
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count8
AutomotiveNo
Lead ShapeNo Lead
PCB changed8
Part StatusActive
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle Quad Drain Triple Source
Package Width6.25(Max)
Package Height1.05(Max)
Package Length5.1(Max)
Product CategoryPower MOSFET
Supplier PackagePQFN EP
Maximum IDSS (uA)1
Process TechnologyPowerTrench
Standard Package NameQFN
SVHC Exceeds ThresholdYes
Typical Fall Time (ns)11
Typical Rise Time (ns)27
Number of Elements per Chip1
Maximum Gate Resistance (Ohm)2.7
Minimum Gate Resistance (Ohm)0.1
Maximum Power Dissipation (mW)2700
Typical Gate Charge @ 10V (nC)110
Typical Gate Charge @ Vgs (nC)110@10V
Maximum Gate Source Voltage (V)±20
Typical Output Capacitance (pF)2140
Typical Turn-On Delay Time (ns)43
Maximum Drain Source Voltage (V)60
Typical Gate Plateau Voltage (V)5
Typical Turn-Off Delay Time (ns)42
Maximum Diode Forward Voltage (V)1.3
Typical Diode Forward Voltage (V)0.8
Typical Gate to Drain Charge (nC)20
Maximum Gate Threshold Voltage (V)4.5
Minimum Gate Threshold Voltage (V)2.5
Typical Gate Threshold Voltage (V)3.3
Typical Gate to Source Charge (nC)40
Typical Reverse Recovery Time (ns)68
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)32
Operating Junction Temperature (°C)-55 to 150
Typical Input Capacitance @ Vds (pF)8235@30V
Typical Reverse Recovery Charge (nC)62
Maximum Drain Source Resistance (mOhm)1.65@10V
Maximum Gate Source Leakage Current (nA)100
Maximum Positive Gate Source Voltage (V)20
Maximum Pulsed Drain Current @ TC=25°C (A)1021
Maximum Power Dissipation on PCB @ TC=25°C (W)2.7
Typical Reverse Transfer Capacitance @ Vds (pF)70@30V
Maximum Continuous Drain Current on PCB @ TC=25°C (A)234
Maximum Junction Ambient Thermal Resistance on PCB (°C/W)115
Description
Trans MOSFET N-CH 60V 32A 8-Pin PQFN EP T/R
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