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FDMS86202
FDMS86202
MOSFETs FDMS86202
onsemi
FDMS86202
--
Diodes, Transistors and Thyristors
MOSFETs
FDMS86202.pdf
Specification
Product AttributeAttribute Value
PPAPNo
SVHCYes
EU RoHSCompliant with Exemption
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count8
AutomotiveNo
Lead ShapeNo Lead
PCB changed8
Part StatusActive
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle Quad Drain Triple Source
Package Width6.25(Max)
Package Height0.75(Max)
Package Length5.1(Max)
Product CategoryPower MOSFET
Supplier PackagePower 56 EP
Maximum IDSS (uA)1
Process TechnologyTMOS
SVHC Exceeds ThresholdYes
Typical Fall Time (ns)5
Typical Rise Time (ns)6
Number of Elements per Chip1
Maximum Power Dissipation (mW)2700
Typical Gate Charge @ 10V (nC)45
Typical Gate Charge @ Vgs (nC)29@6V|45@10V
Maximum Gate Source Voltage (V)±20
Typical Turn-On Delay Time (ns)21
Maximum Drain Source Voltage (V)120
Typical Turn-Off Delay Time (ns)27
Maximum Gate Threshold Voltage (V)4
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)13.5
Typical Input Capacitance @ Vds (pF)3195@60V
Maximum Drain Source Resistance (mOhm)7.2@10V
Maximum Gate Source Leakage Current (nA)100
Description
Trans MOSFET N-CH 120V 13.5A 8-Pin Power 56 EP T/R
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