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FDMQ86530L
FDMQ86530L
MOSFETs FDMQ86530L
onsemi
FDMQ86530L
--
Diodes, Transistors and Thyristors
MOSFETs
FDMQ86530L.pdf
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSCompliant
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count12
AutomotiveNo
Lead ShapeNo Lead
PCB changed12
Part StatusActive
Channel ModeEnhancement
Channel TypeN
ConfigurationQuad
Package Width4.5
Package Height0.75(Max)
Package Length5
Product CategoryPower MOSFET
Supplier PackageMLP EP
Maximum IDSS (uA)1
Standard Package NameQFN
Typical Fall Time (ns)2.8
Typical Rise Time (ns)3.8
Number of Elements per Chip4
Maximum Power Dissipation (mW)1900
Typical Gate Charge @ 10V (nC)23
Typical Gate Charge @ Vgs (nC)23@10V|11@4.5V
Maximum Gate Source Voltage (V)±20
Typical Turn-On Delay Time (ns)8.8
Maximum Drain Source Voltage (V)60
Typical Turn-Off Delay Time (ns)22
Maximum Gate Threshold Voltage (V)3
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)8
Typical Input Capacitance @ Vds (pF)1725@30V
Maximum Drain Source Resistance (mOhm)17.5@10V
Maximum Gate Source Leakage Current (nA)100
Description
Trans MOSFET N-CH 60V 8A 12-Pin MLP EP T/R
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