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FDMD8260LET60
FDMD8260LET60
MOSFETs FDMD8260LET60
onsemi
FDMD8260LET60
--
Diodes, Transistors and Thyristors
MOSFETs
Specification
Product AttributeAttribute Value
PPAPNo
SVHCYes
EU RoHSCompliant with Exemption
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count12
AutomotiveNo
Lead ShapeNo Lead
PCB changed12
Part StatusLTB
Channel ModeEnhancement
Channel TypeN
ConfigurationDual
Package Width3.4(Max)
Package Height0.75(Max)
Package Length5.1(Max)
Product CategoryPower MOSFET
Supplier PackagePQFN EP
Maximum IDSS (uA)1
Process TechnologyTMOS
Standard Package NameQFN
SVHC Exceeds ThresholdYes
Typical Fall Time (ns)11
Typical Rise Time (ns)10
Number of Elements per Chip2
Maximum Power Dissipation (mW)2500
Typical Gate Charge @ 10V (nC)49
Typical Gate Charge @ Vgs (nC)49@10V|25@5V
Maximum Gate Source Voltage (V)±20
Typical Turn-On Delay Time (ns)12
Maximum Drain Source Voltage (V)60
Typical Turn-Off Delay Time (ns)47
Maximum Gate Threshold Voltage (V)3
Maximum Operating Temperature (°C)175
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)15
Typical Input Capacitance @ Vds (pF)3745@30V
Maximum Drain Source Resistance (mOhm)5.8@10V
Maximum Gate Source Leakage Current (nA)100
Description
Trans MOSFET N-CH 60V 15A 12-Pin PQFN EP T/R
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