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FDMC89521L
FDMC89521L
MOSFETs FDMC89521L
onsemi
FDMC89521L
--
Diodes, Transistors and Thyristors
MOSFETs
FDMC89521L.pdf
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSCompliant
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count8
AutomotiveNo
Lead ShapeNo Lead
PCB changed8
Part StatusActive
Channel ModeEnhancement
Channel TypeN
ConfigurationDual Triple Source
Package Width3
Package Height0.75(Max)
Package Length3
Product CategoryPower MOSFET
Supplier PackageWDFN EP
Maximum IDSS (uA)1
Standard Package NameDFN
Typical Fall Time (ns)1.7
Typical Rise Time (ns)2.1
Number of Elements per Chip2
Maximum Power Dissipation (mW)1900
Typical Gate Charge @ 10V (nC)17
Typical Gate Charge @ Vgs (nC)17@10V|7.9@4.5V
Maximum Gate Source Voltage (V)±20
Typical Turn-On Delay Time (ns)7.9
Maximum Drain Source Voltage (V)60
Typical Turn-Off Delay Time (ns)18
Maximum Gate Threshold Voltage (V)3
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)8.2
Typical Input Capacitance @ Vds (pF)1228@30V
Maximum Drain Source Resistance (mOhm)17@10V
Maximum Gate Source Leakage Current (nA)100
Description
Trans MOSFET N-CH 60V 8.2A 8-Pin WDFN EP T/R
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