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FDMC8360L
FDMC8360L
MOSFETs FDMC8360L
onsemi
FDMC8360L
--
Diodes, Transistors and Thyristors
MOSFETs
FDMC8360L.pdf
Specification
Product AttributeAttribute Value
HTS8541.29.00.95
PPAPNo
SVHCYes
EU RoHSCompliant with Exemption
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count8
AutomotiveNo
Lead ShapeNo Lead
PCB changed8
Part StatusActive
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle Quad Drain Triple Source
Package Width3.4(Max)
Package Height0.75(Max)
Package Length3.4(Max)
Product CategoryPower MOSFET
Supplier PackagePower QFN EP
Maximum IDSS (uA)1
Process TechnologyTMOS
Standard Package NameQFN
SVHC Exceeds ThresholdYes
Typical Fall Time (ns)5.3
Typical Rise Time (ns)6.7
Number of Elements per Chip1
Maximum Power Dissipation (mW)2300
Typical Gate Charge @ 10V (nC)57
Typical Gate Charge @ Vgs (nC)26@4.5V|57@10V
Maximum Gate Source Voltage (V)±20
Typical Turn-On Delay Time (ns)15
Maximum Drain Source Voltage (V)40
Typical Turn-Off Delay Time (ns)38
Maximum Gate Threshold Voltage (V)3
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)27
Typical Input Capacitance @ Vds (pF)4140@20V
Maximum Drain Source Resistance (mOhm)2.1@10V
Maximum Gate Source Leakage Current (nA)100
Description
Trans MOSFET N-CH 40V 27A 8-Pin Power QFN EP T/R
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