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FDH50N50
FDH50N50
MOSFETs FDH50N50
onsemi
FDH50N50
--
Diodes, Transistors and Thyristors
MOSFETs
FDH50N50.pdf
Specification
Product AttributeAttribute Value
TabTab
PPAPNo
EU RoHSCompliant
MountingThrough Hole
ECCN (US)EAR99
PackagingRail
Pin Count3
AutomotiveNo
Lead ShapeThrough Hole
PCB changed3
Part StatusObsolete
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle
Package Width4.82
Package Height20.82
Package Length15.87
Product CategoryPower MOSFET
Supplier PackageTO-247
Maximum IDSS (uA)25
Process TechnologyUniFET
Standard Package NameTO-247
Typical Fall Time (ns)230
Typical Rise Time (ns)360
Number of Elements per Chip1
Maximum Power Dissipation (mW)625000
Typical Gate Charge @ 10V (nC)105
Typical Gate Charge @ Vgs (nC)105@10V
Maximum Gate Source Voltage (V)±20
Typical Turn-On Delay Time (ns)105
Maximum Drain Source Voltage (V)500
Typical Turn-Off Delay Time (ns)225
Maximum Gate Threshold Voltage (V)5
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)48
Typical Input Capacitance @ Vds (pF)4979@25V
Maximum Drain Source Resistance (mOhm)105@10V
Maximum Gate Source Leakage Current (nA)100
Description
Trans MOSFET N-CH 500V 48A 3-Pin(3+Tab) TO-247 Rail
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