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FDBL0240N100
FDBL0240N100
MOSFETs FDBL0240N100
onsemi
FDBL0240N100
--
Diodes, Transistors and Thyristors
MOSFETs
FDBL0240N100.pdf
Specification
Product AttributeAttribute Value
TabTab
PPAPNo
SVHCYes
EU RoHSCompliant with Exemption
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count9
AutomotiveNo
PCB changed8
Part StatusActive
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle
Package Width10.48(Max)
Package Height2.4(Max)
Package Length9.9(Max)
Product CategoryPower MOSFET
Supplier PackageTO-LL
Maximum IDSS (uA)1
Process TechnologyTMOS
SVHC Exceeds ThresholdYes
Typical Fall Time (ns)17
Typical Rise Time (ns)32
Number of Elements per Chip1
Maximum Power Dissipation (mW)3500
Typical Gate Charge @ 10V (nC)79
Typical Gate Charge @ Vgs (nC)79@10V
Maximum Gate Source Voltage (V)±20
Typical Turn-On Delay Time (ns)26
Maximum Drain Source Voltage (V)100
Typical Turn-Off Delay Time (ns)44
Maximum Gate Threshold Voltage (V)4
Maximum Operating Temperature (°C)175
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)210
Typical Input Capacitance @ Vds (pF)5835@50V
Maximum Drain Source Resistance (mOhm)2.8@10V
Maximum Gate Source Leakage Current (nA)100
Description
Trans MOSFET N-CH 100V 210A 9-Pin(8+Tab) TO-LL T/R
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