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FDB8870
FDB8870
MOSFETs FDB8870
onsemi
FDB8870
--
Diodes, Transistors and Thyristors
MOSFETs
FDB8870.pdf
Specification
Product AttributeAttribute Value
TabTab
PPAPNo
SVHCYes
EU RoHSCompliant with Exemption
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count3
AutomotiveNo
Lead ShapeGull-wing
PCB changed2
Part StatusObsolete
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle
Package Width9.65(Max)
Package Height4.83(Max)
Package Length10.67(Max)
Product CategoryPower MOSFET
Supplier PackageD2PAK
Maximum IDSS (uA)1
Process TechnologyPowerTrench
Standard Package NameTO-263
SVHC Exceeds ThresholdYes
Typical Fall Time (ns)47
Typical Rise Time (ns)98
Number of Elements per Chip1
Maximum Power Dissipation (mW)160000
Typical Gate Charge @ 10V (nC)106
Typical Gate Charge @ Vgs (nC)106@10V|56@5V
Maximum Gate Source Voltage (V)±20
Typical Output Capacitance (pF)970
Typical Turn-On Delay Time (ns)10
Maximum Drain Source Voltage (V)30
Typical Gate Plateau Voltage (V)3
Typical Turn-Off Delay Time (ns)75
Maximum Diode Forward Voltage (V)1.25
Typical Gate to Drain Charge (nC)23
Maximum Gate Threshold Voltage (V)2.5
Minimum Gate Threshold Voltage (V)1.2
Typical Gate to Source Charge (nC)15
Typical Reverse Recovery Time (ns)37
Maximum Operating Temperature (°C)175
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)23
Typical Input Capacitance @ Vds (pF)5200@15V
Typical Reverse Recovery Charge (nC)21(Max)
Maximum Drain Source Resistance (mOhm)3.9@10V
Maximum Gate Source Leakage Current (nA)100
Maximum Positive Gate Source Voltage (V)20
Typical Reverse Transfer Capacitance @ Vds (pF)570@15V
Maximum Junction Ambient Thermal Resistance on PCB (°C/W)43
Description
Trans MOSFET N-CH 30V 23A 3-Pin(2+Tab) D2PAK T/R
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