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MOSFETs FDB3632-SN00239
onsemi
FDB3632-SN00239
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Diodes, Transistors and Thyristors
MOSFETs
Specification
Product AttributeAttribute Value
PPAPNo
SVHCYes
EU RoHSCompliant with Exemption
ECCN (US)EAR99
PackagingTape and Reel
AutomotiveNo
Part StatusObsolete
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle
Product CategoryPower MOSFET
Process TechnologyTMOS
SVHC Exceeds ThresholdYes
Typical Fall Time (ns)46
Typical Rise Time (ns)39
Number of Elements per Chip1
Maximum Power Dissipation (mW)310000
Typical Gate Charge @ 10V (nC)84
Typical Gate Charge @ Vgs (nC)84@10V
Maximum Gate Source Voltage (V)±20
Typical Turn-On Delay Time (ns)30
Maximum Drain Source Voltage (V)100
Typical Turn-Off Delay Time (ns)96
Maximum Operating Temperature (°C)175
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)12
Typical Input Capacitance @ Vds (pF)6000@25V
Maximum Drain Source Resistance (MOhm)9@10V
Description
Trans MOSFET N-CH 100V 12A T/R
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