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FDB0250N807L
FDB0250N807L
MOSFETs FDB0250N807L
onsemi
FDB0250N807L
--
Diodes, Transistors and Thyristors
MOSFETs
FDB0250N807L.pdf
Specification
Product AttributeAttribute Value
TabTab
PPAPNo
SVHCYes
EU RoHSCompliant with Exemption
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count7
AutomotiveNo
PCB changed6
Part StatusActive
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle Quint Source
Package Width9.4(Max)
Package Height4.7(Max)
Package Length10.2(Max)
Product CategoryPower MOSFET
Supplier PackageD2PAK
Maximum IDSS (uA)1
Process TechnologyTMOS
Standard Package NameTO-263
SVHC Exceeds ThresholdYes
Typical Fall Time (ns)39
Typical Rise Time (ns)64
Number of Elements per Chip1
Maximum Power Dissipation (mW)214000
Typical Gate Charge @ 10V (nC)143
Typical Gate Charge @ Vgs (nC)143@10V
Maximum Gate Source Voltage (V)±20
Typical Turn-On Delay Time (ns)45
Maximum Drain Source Voltage (V)80
Typical Turn-Off Delay Time (ns)79
Maximum Gate Threshold Voltage (V)4
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)240
Typical Input Capacitance @ Vds (pF)11000@40V
Maximum Drain Source Resistance (mOhm)2.2@10V
Maximum Gate Source Leakage Current (nA)100
Description
Trans MOSFET N-CH 80V 240A 7-Pin(6+Tab) D2PAK T/R
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