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FCMT250N65S3
FCMT250N65S3
MOSFETs FCMT250N65S3
onsemi
FCMT250N65S3
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Diodes, Transistors and Thyristors
MOSFETs
FCMT250N65S3.pdf
Specification
Product AttributeAttribute Value
HTS8541.29.00.95
PPAPNo
SVHCYes
EU RoHSCompliant with Exemption
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count4
AutomotiveNo
Lead ShapeNo Lead
PCB changed4
Part StatusActive
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle Triple Source
Package Width8
Package Height1.05(Max)
Package Length8
Product CategoryPower MOSFET
Supplier PackagePQFN EP
Maximum IDSS (uA)10
Process TechnologySuperFET III
Standard Package NameQFN
SVHC Exceeds ThresholdYes
Typical Fall Time (ns)7.2
Typical Rise Time (ns)13
Number of Elements per Chip1
Maximum Power Dissipation (mW)90000
Typical Gate Charge @ 10V (nC)24
Typical Gate Charge @ Vgs (nC)24@10V
Maximum Gate Source Voltage (V)±30
Typical Output Capacitance (pF)25
Typical Turn-On Delay Time (ns)15
Maximum Drain Source Voltage (V)650
Typical Gate Plateau Voltage (V)5.8
Typical Turn-Off Delay Time (ns)40
Maximum Diode Forward Voltage (V)1.2
Typical Gate to Drain Charge (nC)9.7
Maximum Gate Threshold Voltage (V)4.5
Minimum Gate Threshold Voltage (V)2.5
Typical Gate to Source Charge (nC)6.1
Typical Reverse Recovery Time (ns)251
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)12
Operating Junction Temperature (°C)-55 to 150
Typical Input Capacitance @ Vds (pF)1010@400V
Typical Reverse Recovery Charge (nC)3400
Maximum Drain Source Resistance (MOhm)250@10V
Maximum Gate Source Leakage Current (nA)100
Maximum Positive Gate Source Voltage (V)30
Maximum Pulsed Drain Current @ TC=25°C (A)30
Description
Trans MOSFET N-CH 650V 12A 4-Pin PQFN EP T/R
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