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ECH8668-TL-H
ECH8668-TL-H
MOSFETs ECH8668-TL-H
onsemi
ECH8668-TL-H
--
Diodes, Transistors and Thyristors
MOSFETs
ECH8668-TL-H.pdf
Specification
Product AttributeAttribute Value
PPAPNo
SVHCYes
EU RoHSCompliant with Exemption
MaterialSi
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count8
AutomotiveNo
Lead ShapeFlat
PCB changed8
Part StatusObsolete
Channel ModeEnhancement
Channel TypeN|P
ConfigurationDual Dual Drain
Package Width2.3
Package Height0.93(Max)
Package Length2.9
Product CategoryPower MOSFET
Supplier PackageECH
Maximum IDSS (uA)1
Standard Package NameECH
SVHC Exceeds ThresholdYes
Typical Fall Time (ns)80@N Channel|68@P Channel
Typical Rise Time (ns)120@N Channel|55@P Channel
Number of Elements per Chip2
Maximum Power Dissipation (mW)1500
Typical Gate Charge @ Vgs (nC)10.8@4.5V@N Channel|11@4.5V@P Channel
Maximum Gate Source Voltage (V)±10
Typical Turn-On Delay Time (ns)17.5@N Channel|14@P Channel
Maximum Drain Source Voltage (V)20
Typical Turn-Off Delay Time (ns)68@N Channel|92@P Channel
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)7.5@N Channel|5@P Channel
Typical Input Capacitance @ Vds (pF)1060@10V@N Channel|960@10V@P Channel
Maximum Drain Source Resistance (mOhm)17@4.5V@N Channel|38@4.5V@P Channel
Maximum Gate Source Leakage Current (nA)10000
Description
Trans MOSFET N/P-CH Si 20V 7.5A/5A 8-Pin ECH T/R
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