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MOSFETs ECH8653-S-TL-H
onsemi
ECH8653-S-TL-H
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Diodes, Transistors and Thyristors
MOSFETs
Specification
| Product Attribute | Attribute Value |
| PPAP | No |
| SVHC | Yes |
| EU RoHS | Compliant with Exemption |
| Material | Si |
| Mounting | Surface Mount |
| ECCN (US) | EAR99 |
| Pin Count | 8 |
| Automotive | No |
| PCB changed | 8 |
| Part Status | Obsolete |
| Channel Mode | Enhancement |
| Channel Type | N |
| Configuration | Dual Common Quad Drain |
| Package Width | 2.3 |
| Package Height | 0.93(Max) |
| Package Length | 2.9 |
| Product Category | Power MOSFET |
| Supplier Package | ECH |
| SVHC Exceeds Threshold | Yes |
| Typical Fall Time (ns) | 36 |
| Typical Rise Time (ns) | 48 |
| Number of Elements per Chip | 2 |
| Maximum Power Dissipation (mW) | 1500 |
| Typical Gate Charge @ Vgs (nC) | 18.5@8V |
| Maximum Gate Source Voltage (V) | ±10 |
| Typical Turn-On Delay Time (ns) | 13 |
| Maximum Drain Source Voltage (V) | 20 |
| Typical Turn-Off Delay Time (ns) | 94 |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Continuous Drain Current (A) | 7.5 |
| Typical Input Capacitance @ Vds (pF) | 1280@10V |
| Maximum Drain Source Resistance (mOhm) | 20@8V |
| Description |
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