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ECH8306-TL-E
ECH8306-TL-E
MOSFETs ECH8306-TL-E
onsemi
ECH8306-TL-E
--
Diodes, Transistors and Thyristors
MOSFETs
ECH8306-TL-E.pdf
Specification
Product AttributeAttribute Value
PPAPNo
SVHCYes
EU RoHSCompliant with Exemption
MaterialSi
MountingSurface Mount
ECCN (US)EAR99
Pin Count8
AutomotiveNo
PCB changed8
Part StatusObsolete
Channel ModeEnhancement
Channel TypeP
ConfigurationSingle Quad Drain Triple Source
Package Width2.3
Package Height0.93(Max)
Package Length2.9
Product CategoryPower MOSFET
Supplier PackageECH
Maximum IDSS (uA)1
SVHC Exceeds ThresholdYes
Typical Fall Time (ns)54
Typical Rise Time (ns)10
Number of Elements per Chip1
Maximum Power Dissipation (mW)1600
Typical Gate Charge @ 10V (nC)33
Typical Gate Charge @ Vgs (nC)33@10V
Maximum Gate Source Voltage (V)±20
Typical Turn-On Delay Time (ns)13.5
Maximum Drain Source Voltage (V)100
Typical Turn-Off Delay Time (ns)194
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)2
Typical Input Capacitance @ Vds (pF)1600@20V
Maximum Drain Source Resistance (mOhm)225@10V
Maximum Gate Source Leakage Current (nA)10000
Description
Trans MOSFET P-CH Si 100V 2A
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