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STM8S003F3P6TRATMEGA48PA-AUAT24C512C-SSHD-TSTM32L031G6U6TPS74801DRCR
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DMN60H4D5SK3-13
DMN60H4D5SK3-13
MOSFETs DMN60H4D5SK3-13
Diodes Incorporated
DMN60H4D5SK3-13
--
Diodes, Transistors and Thyristors
MOSFETs
DMN60H4D5SK3-13.pdf
Specification
Product AttributeAttribute Value
TabTab
PPAPNo
SVHCYes
EU RoHSCompliant with Exemption
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count3
AutomotiveNo
PCB changed2
Part StatusObsolete
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle
Package Width6.1
Package Height2.3
Package Length6.6
Product CategoryPower MOSFET
Supplier PackageDPAK
Maximum IDSS (uA)1
SVHC Exceeds ThresholdYes
Typical Fall Time (ns)13.2
Typical Rise Time (ns)10.5
Number of Elements per Chip1
Maximum Power Dissipation (mW)41000
Typical Gate Charge @ Vgs (nC)8.2@10V
Maximum Gate Source Voltage (V)±30
Typical Turn-On Delay Time (ns)9.8
Maximum Drain Source Voltage (V)600
Typical Turn-Off Delay Time (ns)33.4
Maximum Gate Threshold Voltage (V)4
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)2.5
Typical Input Capacitance @ Vds (pF)273.5@25V
Maximum Drain Source Resistance (mOhm)4500@10V
Maximum Gate Source Leakage Current (nA)100
Description
Trans MOSFET N-CH 600V 2.5A 3-Pin(2+Tab) DPAK T/R
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