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MOSFETs DMN3022LFG-13
Diodes Incorporated
DMN3022LFG-13
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Diodes, Transistors and Thyristors
MOSFETs
Specification
| Product Attribute | Attribute Value |
| PPAP | No |
| SVHC | Yes |
| EU RoHS | Compliant with Exemption |
| ECCN (US) | EAR99 |
| Packaging | Tape and Reel |
| Automotive | No |
| Part Status | Active |
| Channel Mode | Enhancement |
| Channel Type | N |
| Configuration | Dual |
| Product Category | Power MOSFET |
| SVHC Exceeds Threshold | Yes |
| Typical Fall Time (ns) | 2.4@Q 2|1.9@Q 1 |
| Typical Rise Time (ns) | 2.5@Q 2|1.8@Q 1 |
| Number of Elements per Chip | 2 |
| Maximum Power Dissipation (mW) | 1960 |
| Typical Gate Charge @ Vgs (nC) | 6.1@4.5V@Q 2|2.8@4.5V@Q 1 |
| Maximum Gate Source Voltage (V) | ±10 |
| Typical Turn-On Delay Time (ns) | 4.5@Q 1|5.6@Q 2 |
| Maximum Drain Source Voltage (V) | 30 |
| Typical Turn-Off Delay Time (ns) | 11.7@Q 2|7.2@Q 1 |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Continuous Drain Current (A) | 7.6 |
| Typical Input Capacitance @ Vds (pF) | 766@15V@Q 2|370@15V@Q 1 |
| Maximum Drain Source Resistance (mOhm) | 22@5V@Q 1|8@5V@Q 2 |
| Description |
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