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STM8S003F3P6TRATMEGA48PA-AUAT24C512C-SSHD-TSTM32L031G6U6TPS74801DRCR
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DMN2015UFDE-7-55
DMN2015UFDE-7-55
MOSFETs DMN2015UFDE-7-55
Diodes Incorporated
DMN2015UFDE-7-55
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Diodes, Transistors and Thyristors
MOSFETs
DMN2015UFDE-7-55.pdf
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSCompliant
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count6
AutomotiveNo
Lead ShapeNo Lead
PCB changed6
Part StatusActive
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle Quad Drain
Package Width2
Package Height0.57
Package Length2
Product CategoryPower MOSFET
Supplier PackageDFN EP
Maximum IDSS (uA)1
Standard Package NameDFN
Typical Fall Time (ns)10.9
Typical Rise Time (ns)16.8
Supplier Temperature GradeAutomotive
Number of Elements per Chip1
Maximum Power Dissipation (mW)2030
Typical Gate Charge @ 10V (nC)45.6
Typical Gate Charge @ Vgs (nC)45.6@10V|19.7@4.5V
Maximum Gate Source Voltage (V)±12
Typical Turn-On Delay Time (ns)7.4
Maximum Drain Source Voltage (V)20
Typical Turn-Off Delay Time (ns)43.6
Maximum Gate Threshold Voltage (V)1.1
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)10.5
Typical Input Capacitance @ Vds (pF)1779@10V
Maximum Drain Source Resistance (mOhm)11.6@4.5V
Maximum Gate Source Leakage Current (nA)100
Description
Trans MOSFET N-CH 20V 10.5A 6-Pin DFN EP T/R
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