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MOSFETs DMG1013UWQ-13
Diodes Incorporated
DMG1013UWQ-13
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Diodes, Transistors and Thyristors
MOSFETs
Specification
| Product Attribute | Attribute Value |
| HTS | 8541.21.00.95 |
| PPAP | Yes |
| EU RoHS | Compliant |
| Mounting | Surface Mount |
| ECCN (US) | EAR99 |
| Packaging | Tape and Reel |
| Pin Count | 3 |
| Automotive | Yes |
| Lead Shape | Gull-wing |
| PCB changed | 3 |
| Part Status | Active |
| Channel Mode | Enhancement |
| Channel Type | P |
| Configuration | Single |
| Package Width | 1.3 |
| Package Height | 0.95 |
| Package Length | 2.15 |
| Product Category | Power MOSFET |
| Supplier Package | SOT-323 |
| Maximum IDSS (uA) | 0.1 |
| Standard Package Name | SOT |
| Typical Fall Time (ns) | 20.7 |
| Typical Rise Time (ns) | 8.1 |
| Supplier Temperature Grade | Automotive |
| Number of Elements per Chip | 1 |
| Maximum Power Dissipation (mW) | 310 |
| Typical Gate Charge @ Vgs (nC) | 0.6224@4.5V |
| Maximum Gate Source Voltage (V) | ±6 |
| Typical Output Capacitance (pF) | 12.07 |
| Typical Turn-On Delay Time (ns) | 5.1 |
| Maximum Drain Source Voltage (V) | 20 |
| Typical Turn-Off Delay Time (ns) | 28.4 |
| Maximum Diode Forward Voltage (V) | 1.2 |
| Maximum Gate Threshold Voltage (V) | 1 |
| Minimum Gate Threshold Voltage (V) | 0.5 |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Continuous Drain Current (A) | 0.82 |
| Operating Junction Temperature (°C) | -55 to 150 |
| Typical Input Capacitance @ Vds (pF) | 59.76@16V |
| Maximum Drain Source Resistance (mOhm) | 750@4.5V |
| Maximum Gate Source Leakage Current (nA) | 2000 |
| Maximum Positive Gate Source Voltage (V) | 6 |
| Maximum Pulsed Drain Current @ TC=25°C (A) | 3 |
| Maximum Junction Ambient Thermal Resistance on PCB (°C/W) | 398 |
| Description |
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