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MOSFETs DMC1017UPD-13
Diodes Incorporated
DMC1017UPD-13
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Diodes, Transistors and Thyristors
MOSFETs
Specification
| Product Attribute | Attribute Value |
| PPAP | No |
| EU RoHS | Compliant |
| Mounting | Surface Mount |
| ECCN (US) | EAR99 |
| Packaging | Tape and Reel |
| Pin Count | 8 |
| Automotive | No |
| Lead Shape | No Lead |
| PCB changed | 8 |
| Part Status | Obsolete |
| Channel Mode | Enhancement |
| Channel Type | N|P |
| Configuration | Dual Dual Drain |
| Package Width | 5.8 |
| Package Height | 1.05(Max) |
| Package Length | 4.9 |
| Product Category | Power MOSFET |
| Supplier Package | PowerDI EP |
| Maximum IDSS (uA) | 1 |
| Typical Fall Time (ns) | 31.8@Q 1|129@Q 2 |
| Typical Rise Time (ns) | 10.9@Q 1|25.5@Q 2 |
| Number of Elements per Chip | 2 |
| Maximum Power Dissipation (mW) | 2300 |
| Typical Gate Charge @ 10V (nC) | 35.3 |
| Typical Gate Charge @ Vgs (nC) | 35.4@10V|18.6@4.5V@Q 1|38.8@8V|23.7@4.5V@Q 2 |
| Maximum Gate Source Voltage (V) | ±8 |
| Typical Turn-On Delay Time (ns) | 6.9@Q 1|10.6@Q 2 |
| Maximum Drain Source Voltage (V) | 12 |
| Typical Turn-Off Delay Time (ns) | 70.3@Q 1|144@Q 2 |
| Maximum Gate Threshold Voltage (V) | 1.5 |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Continuous Drain Current (A) | 9.5@N Channel|6.9@P Channel |
| Typical Input Capacitance @ Vds (pF) | 1787@6V@Q 1|2100@6V@Q 2 |
| Maximum Drain Source Resistance (mOhm) | 17@4.5V@N Channel|32@4.5V@P Channel |
| Maximum Gate Source Leakage Current (nA) | 100 |
| Description |
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