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BUZ73XT
BUZ73XT
MOSFETs BUZ73XT
Infineon
BUZ73XT
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Diodes, Transistors and Thyristors
MOSFETs
BUZ73XT.pdf
Specification
Product AttributeAttribute Value
EU RoHSCompliant
ECCN (US)EAR99
Part StatusObsolete
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle
Product CategoryPower MOSFET
Process TechnologySIPMOS
Typical Fall Time (ns)30
Typical Rise Time (ns)40
Number of Elements per Chip1
Maximum Power Dissipation (mW)40000
Maximum Gate Source Voltage (V)±20
Typical Output Capacitance (pF)85
Typical Turn-On Delay Time (ns)10
Maximum Drain Source Voltage (V)200
Typical Turn-Off Delay Time (ns)55
Maximum Gate Threshold Voltage (V)4
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)7
Typical Input Capacitance @ Vds (pF)400@25V
Typical Reverse Recovery Charge (nC)600
Maximum Drain Source Resistance (MOhm)400@10V
Description
Trans MOSFET N-CH 200V 7A 3-Pin(3+Tab) TO-220
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