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STM8S003F3P6TRATMEGA48PA-AUAT24C512C-SSHD-TSTM32L031G6U6TPS74801DRCR
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BSP318SH6327XTSA1
BSP318SH6327XTSA1
MOSFETs BSP318SH6327XTSA1
Infineon
BSP318SH6327XTSA1
--
Diodes, Transistors and Thyristors
MOSFETs
BSP318SH6327XTSA1.pdf
Specification
Product AttributeAttribute Value
TabTab
PPAPUnknown
EU RoHSCompliant
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count4
AutomotiveYes
Lead ShapeGull-wing
PCB changed3
Part StatusActive
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle Dual Drain
Package Width3.5
Package Height1.6
Package Length6.5
Product CategorySmall Signal
Supplier PackageSOT-223
Maximum IDSS (uA)1
Process TechnologySIPMOS
Standard Package NameSOT
Typical Fall Time (ns)15
Typical Rise Time (ns)15
Supplier Temperature GradeAutomotive
Number of Elements per Chip1
Maximum Power Dissipation (mW)1800
Typical Gate Charge @ 10V (nC)14
Typical Gate Charge @ Vgs (nC)14@10V
Maximum Gate Source Voltage (V)±20
Typical Turn-On Delay Time (ns)12
Maximum Drain Source Voltage (V)60
Typical Turn-Off Delay Time (ns)20
Maximum Gate Threshold Voltage (V)2
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)2.6
Typical Input Capacitance @ Vds (pF)300@25V
Maximum Drain Source Resistance (mOhm)90@10V
Maximum Gate Source Leakage Current (nA)100
Description
Trans MOSFET N-CH 60V 2.6A Automotive 4-Pin(3+Tab) SOT-223 T/R
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