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STM8S003F3P6TRATMEGA48PA-AUAT24C512C-SSHD-TSTM32L031G6U6TPS74801DRCR
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BSC123N10LS G
BSC123N10LS G
MOSFETs BSC123N10LS G
Infineon
BSC123N10LS G
--
Diodes, Transistors and Thyristors
MOSFETs
BSC123N10LS G.pdf
Specification
Product AttributeAttribute Value
PPAPUnknown
SVHCYes
EU RoHSCompliant with Exemption
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count8
AutomotiveUnknown
Lead ShapeNo Lead
PCB changed8
Part StatusUnconfirmed
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle Quad Drain Triple Source
Package Width5.9
Package Height1
Package Length5.15
Product CategoryPower MOSFET
Supplier PackageTDSON EP
Process TechnologyOptiMOS 2
Standard Package NameSON
SVHC Exceeds ThresholdYes
Typical Fall Time (ns)7
Typical Rise Time (ns)25
Number of Elements per Chip1
Maximum Power Dissipation (mW)114000
Typical Gate Charge @ 10V (nC)51
Typical Gate Charge @ Vgs (nC)51@10V
Maximum Gate Source Voltage (V)±20
Typical Turn-On Delay Time (ns)18
Maximum Drain Source Voltage (V)100
Typical Turn-Off Delay Time (ns)41
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)10.6
Typical Input Capacitance @ Vds (pF)3700@50V
Maximum Drain Source Resistance (mOhm)12.3@10V
Description
Trans MOSFET N-CH 100V 10.6A Automotive 8-Pin TDSON EP T/R
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