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STM8S003F3P6TRATMEGA48PA-AUAT24C512C-SSHD-TSTM32L031G6U6TPS74801DRCR
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BSC0910NDIATMA1
BSC0910NDIATMA1
MOSFETs BSC0910NDIATMA1
Infineon
BSC0910NDIATMA1
--
Diodes, Transistors and Thyristors
MOSFETs
BSC0910NDIATMA1.pdf
Specification
Product AttributeAttribute Value
PPAPNo
SVHCYes
EU RoHSCompliant with Exemption
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count8
AutomotiveNo
Lead ShapeNo Lead
PCB changed8
Part StatusActive
Channel ModeEnhancement
Channel TypeN
ConfigurationDual
Package Width6
Package Height1.1(Max)
Package Length5
Product CategoryPower MOSFET
Supplier PackageTISON EP
Maximum IDSS (uA)1@Q 1|500@Q 2
Process TechnologyOptiMOS
SVHC Exceeds ThresholdYes
Number of Elements per Chip2
Maximum Power Dissipation (mW)2500
Typical Gate Charge @ Vgs (nC)5@4.5V@Q1|23@4.5V@Q2
Maximum Gate Source Voltage (V)±20
Maximum Drain Source Voltage (V)25
Maximum Gate Threshold Voltage (V)2
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)11@Q 1|22@Q 2
Typical Input Capacitance @ Vds (pF)1200@12V@Q 1|3800@12V@Q 2
Maximum Drain Source Resistance (mOhm)4.6@10V@Q 1|1.2@10V@Q 2
Maximum Gate Source Leakage Current (nA)100
Description
Trans MOSFET N-CH 25V 11A/22A 8-Pin TISON EP T/R
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