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BSC0803LSATMA1
BSC0803LSATMA1
MOSFETs BSC0803LSATMA1
Infineon
BSC0803LSATMA1
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Diodes, Transistors and Thyristors
MOSFETs
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSCompliant with Exemption
MountingSurface Mount
ECCN (US)EAR99
Pin Count8
AutomotiveNo
PCB changed8
Part StatusNRND
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle Quad Drain Triple Source
Package Width5.9
Package Height1
Package Length5.15
Product CategoryPower MOSFET
Supplier PackageTDSON EP
Process TechnologyOptiMOS 5
Typical Fall Time (ns)3
Typical Rise Time (ns)3
Supplier Temperature GradeAutomotive
Number of Elements per Chip1
Maximum Power Dissipation (mW)2500
Typical Gate Charge @ Vgs (nC)7.6@4.5V
Maximum Gate Source Voltage (V)20
Typical Turn-On Delay Time (ns)5
Maximum Drain Source Voltage (V)100
Typical Turn-Off Delay Time (ns)14
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)10
Operating Junction Temperature (°C)-55 to 150
Typical Input Capacitance @ Vds (pF)1000@50V
Maximum Drain Source Resistance (MOhm)14.6@10V
Description
Trans MOSFET N-CH 100V 10A 8-Pin TDSON EP T/R
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