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STM8S003F3P6TRATMEGA48PA-AUAT24C512C-SSHD-TSTM32L031G6U6TPS74801DRCR
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BSC010N04LSCATMA1
BSC010N04LSCATMA1
MOSFETs BSC010N04LSCATMA1
Infineon
BSC010N04LSCATMA1
--
Diodes, Transistors and Thyristors
MOSFETs
BSC010N04LSCATMA1.pdf
Specification
Product AttributeAttribute Value
HTS8541.29.00.95
PPAPNo
EU RoHSCompliant with Exemption
ECCN (US)EAR99
PackagingTape and Reel
AutomotiveNo
Part StatusActive
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle Quad Drain Triple Source
Product CategoryPower MOSFET
Maximum IDSS (uA)1
Process TechnologyOptiMOS 5
Typical Fall Time (ns)9
Typical Rise Time (ns)12
Number of Elements per Chip1
Maximum Power Dissipation (mW)2500
Typical Gate Charge @ 10V (nC)95
Typical Gate Charge @ Vgs (nC)49@4.5V|95@10V
Maximum Gate Source Voltage (V)20
Typical Turn-On Delay Time (ns)10
Maximum Drain Source Voltage (V)40
Typical Turn-Off Delay Time (ns)46
Maximum Gate Threshold Voltage (V)2
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)39
Typical Input Capacitance @ Vds (pF)6800@20V
Maximum Drain Source Resistance (mOhm)1.05@10V
Maximum Gate Source Leakage Current (nA)100
Description
Trans MOSFET N-CH 40V 39A T/R
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