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STM8S003F3P6TRATMEGA48PA-AUAT24C512C-SSHD-TSTM32L031G6U6TPS74801DRCR
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BSB044N08NN3GXUMA1
BSB044N08NN3GXUMA1
MOSFETs BSB044N08NN3GXUMA1
Infineon
BSB044N08NN3GXUMA1
--
Diodes, Transistors and Thyristors
MOSFETs
BSB044N08NN3GXUMA1.pdf
Specification
Product AttributeAttribute Value
PPAPUnknown
EU RoHSCompliant
MaterialSi
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count7
AutomotiveUnknown
Lead ShapeNo Lead
PCB changed7
Part StatusActive
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle Dual Drain Dual Source
Package Width4.93
Package Height0.52
Package Length5.5
Product CategoryPower MOSFET
Supplier PackageWDSON
Process TechnologyOptiMOS
Standard Package NameSON
Typical Fall Time (ns)7
Typical Rise Time (ns)9
Number of Elements per Chip1
Maximum Power Dissipation (mW)2200
Typical Gate Charge @ 10V (nC)55
Typical Gate Charge @ Vgs (nC)55@10V
Maximum Gate Source Voltage (V)±20
Typical Turn-On Delay Time (ns)14
Maximum Drain Source Voltage (V)80
Typical Turn-Off Delay Time (ns)26
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-40
Maximum Continuous Drain Current (A)18
Typical Input Capacitance @ Vds (pF)4300@40V
Maximum Drain Source Resistance (MOhm)4400@10V
Description
Trans MOSFET N-CH Si 80V 18A Automotive 7-Pin WDSON T/R
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