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MOSFETs AUIRLZ24NS
Infineon
AUIRLZ24NS
--
Diodes, Transistors and Thyristors
MOSFETs
AUIRLZ24NS.pdf
Specification
Product AttributeAttribute Value
PPAPUnknown
EU RoHSCompliant
MaterialSi
ECCN (US)EAR99
PackagingTube
AutomotiveYes
Part StatusObsolete
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle
Product CategoryPower MOSFET
Maximum IDSS (uA)25
Process TechnologyHEXFET
Typical Fall Time (ns)29
Typical Rise Time (ns)74
Supplier Temperature GradeAutomotive
Number of Elements per Chip1
Maximum Power Dissipation (mW)3800
Typical Gate Charge @ Vgs (nC)15(Max)@5V
Maximum Gate Source Voltage (V)±16
Typical Turn-On Delay Time (ns)7.1
Maximum Drain Source Voltage (V)55
Typical Turn-Off Delay Time (ns)20
Maximum Gate Threshold Voltage (V)2
Maximum Operating Temperature (°C)175
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)18
Typical Input Capacitance @ Vds (pF)480@25V
Maximum Drain Source Resistance (mOhm)60@10V
Maximum Gate Source Leakage Current (nA)100
Description
Trans MOSFET N-CH Si 55V 18A Automotive Tube
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