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MOSFETs APTMC120AM08CD3AG
Microchip Technology
APTMC120AM08CD3AG
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Diodes, Transistors and Thyristors
MOSFETs
Specification
| Product Attribute | Attribute Value |
| PPAP | No |
| EU RoHS | Compliant |
| ECCN (US) | EAR99 |
| Packaging | Box |
| Automotive | No |
| Part Status | NRND |
| Channel Mode | Enhancement |
| Channel Type | N |
| Configuration | Dual |
| Product Category | Power MOSFET |
| Maximum IDSS (uA) | 1000 |
| Typical Fall Time (ns) | 41 |
| Typical Rise Time (ns) | 25 |
| Number of Elements per Chip | 2 |
| Maximum Power Dissipation (mW) | 1100000 |
| Typical Gate Charge @ Vgs (nC) | 900 |
| Maximum Gate Source Voltage (V) | 20 |
| Typical Turn-On Delay Time (ns) | 13 |
| Maximum Drain Source Voltage (V) | 1200 |
| Typical Turn-Off Delay Time (ns) | 52 |
| Maximum Gate Threshold Voltage (V) | 4 |
| Maximum Operating Temperature (°C) | 100 |
| Minimum Operating Temperature (°C) | -40 |
| Maximum Continuous Drain Current (A) | 250 |
| Typical Input Capacitance @ Vds (pF) | 18600@800V |
| Maximum Drain Source Resistance (mOhm) | 10@20V |
| Maximum Gate Source Leakage Current (nA) | 2500 |
| Description |
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