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APT25SM120S
APT25SM120S
MOSFETs APT25SM120S
Microchip Technology
APT25SM120S
--
Diodes, Transistors and Thyristors
MOSFETs
APT25SM120S.pdf
Specification
Product AttributeAttribute Value
TabTab
PPAPNo
EU RoHSCompliant
MaterialSiC
MountingSurface Mount
ECCN (US)EAR99
Pin Count3
AutomotiveNo
PCB changed2
Part StatusObsolete
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle
Package Width13.99(Max)
Package Height5.08(Max)
Package Length16.05(Max)
Product CategoryPower MOSFET
Supplier PackageD3PAK
Maximum IDSS (uA)100
Standard Package NameTO-268
Typical Fall Time (ns)23
Typical Rise Time (ns)4
Number of Elements per Chip1
Maximum Power Dissipation (mW)175000
Typical Gate Charge @ Vgs (nC)72@20V
Maximum Gate Source Voltage (V)25
Typical Turn-On Delay Time (ns)4
Maximum Drain Source Voltage (V)1200
Typical Turn-Off Delay Time (ns)22
Maximum Gate Threshold Voltage (V)2.5(Typ)
Maximum Operating Temperature (°C)175
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)25
Typical Input Capacitance @ Vds (pF)1260
Maximum Drain Source Resistance (MOhm)175@20V
Maximum Gate Source Leakage Current (nA)100
Description
Trans MOSFET N-CH SiC 1.2KV 25A 3-Pin(2+Tab) D3PAK
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