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APT20M19JVR
APT20M19JVR
MOSFETs APT20M19JVR
Microchip Technology
APT20M19JVR
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Diodes, Transistors and Thyristors
MOSFETs
APT20M19JVR.pdf
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSNot Compliant
MountingScrew
ECCN (US)EAR99
Pin Count4
AutomotiveNo
Lead ShapeScrew
PCB changed4
Part StatusUnconfirmed
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle Dual Source
Package Width25.4(Max)
Package Height9.6(Max)
Package Length38.2(Max)
Product CategoryPower MOSFET
Supplier PackageSOT-227
Process TechnologyPower MOS V
Standard Package NameSOT
Typical Fall Time (ns)9
Typical Rise Time (ns)40
Number of Elements per Chip1
Maximum Power Dissipation (mW)500000
Typical Gate Charge @ 10V (nC)330
Typical Gate Charge @ Vgs (nC)330@10V
Maximum Gate Source Voltage (V)±30
Typical Turn-On Delay Time (ns)15
Maximum Drain Source Voltage (V)200
Typical Turn-Off Delay Time (ns)45
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)112
Typical Input Capacitance @ Vds (pF)9700@25V
Maximum Drain Source Resistance (MOhm)19@10V
Description
Trans MOSFET N-CH 200V 112A 4-Pin SOT-227
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