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5LN01SP
5LN01SP
MOSFETs 5LN01SP
onsemi
5LN01SP
--
Diodes, Transistors and Thyristors
MOSFETs
5LN01SP.pdf
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSCompliant
MaterialSi
MountingThrough Hole
ECCN (US)EAR99
PackagingBag
Pin Count3
AutomotiveNo
Lead ShapeThrough Hole
PCB changed3
Part StatusObsolete
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle
Package Width2.2
Package Height3
Package Length4
Product CategorySmall Signal
Supplier PackageSPA
Maximum IDSS (uA)10
Typical Fall Time (ns)105
Typical Rise Time (ns)42
Number of Elements per Chip1
Maximum Power Dissipation (mW)250
Typical Gate Charge @ 10V (nC)1.57
Typical Gate Charge @ Vgs (nC)1.57@10V
Maximum Gate Source Voltage (V)±10
Typical Turn-On Delay Time (ns)18
Maximum Drain Source Voltage (V)50
Typical Turn-Off Delay Time (ns)190
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)0.1
Typical Input Capacitance @ Vds (pF)6.6@10V
Maximum Drain Source Resistance (mOhm)7800@4V
Maximum Gate Source Leakage Current (nA)10000
Description
Trans MOSFET N-CH Si 50V 0.1A 3-Pin SPA Bag
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