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MOSFETs 2N7616UBJANSR
Infineon
2N7616UBJANSR
--
Diodes, Transistors and Thyristors
MOSFETs
Specification
| Product Attribute | Attribute Value |
| HTS | 8541.21.00.95 |
| PPAP | No |
| EU RoHS | Not Compliant |
| Mounting | Surface Mount |
| ECCN (US) | EAR99 |
| Pin Count | 4 |
| Automotive | No |
| PCB changed | 4 |
| Part Status | Active |
| Channel Mode | Enhancement |
| Channel Type | N |
| Configuration | Single |
| Package Width | 2.74(Max) |
| Package Height | 1.42(Max) |
| Package Length | 3.25(Max) |
| Product Category | Power MOSFET |
| Supplier Package | Case UB |
| Process Technology | CMOS |
| Standard Package Name | Module |
| Typical Fall Time (ns) | 13(Max) |
| Typical Rise Time (ns) | 24(Max) |
| Number of Elements per Chip | 1 |
| Maximum Power Dissipation (mW) | 600 |
| Typical Gate Charge @ Vgs (nC) | 3.6(Max)@4.5V |
| Maximum Gate Source Voltage (V) | ±10 |
| Typical Turn-On Delay Time (ns) | 8(Max) |
| Maximum Drain Source Voltage (V) | 60 |
| Typical Turn-Off Delay Time (ns) | 30(Max) |
| Maximum Operating Temperature (°C) | 125 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Continuous Drain Current (A) | 0.8 |
| Typical Input Capacitance @ Vds (pF) | 166@25V |
| Maximum Drain Source Resistance (MOhm) | 680@4.5V |
| Description |
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