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2N7002,215
2N7002,215
MOSFETs 2N7002,215
Nexperia
2N7002,215
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Diodes, Transistors and Thyristors
MOSFETs
2N7002,215.pdf
Specification
Product AttributeAttribute Value
PPAPNo
SVHCYes
EU RoHSCompliant
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count3
AutomotiveNo
Lead ShapeGull-wing
PCB changed3
Part StatusActive
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle
Package Width1.4(Max)
Package Height1(Max)
Package Length3(Max)
Product CategoryPower MOSFET
Supplier PackageSOT-23
Maximum IDSS (uA)1
Process TechnologyTMOS
Standard Package NameSOT
Number of Elements per Chip1
Maximum Power Dissipation (mW)830
Maximum Gate Source Voltage (V)30
Typical Output Capacitance (pF)6.8
Maximum Drain Source Voltage (V)60
Maximum Diode Forward Voltage (V)1.2
Typical Diode Forward Voltage (V)0.85
Maximum Gate Threshold Voltage (V)2.5
Minimum Gate Threshold Voltage (V)1
Typical Gate Threshold Voltage (V)2
Typical Reverse Recovery Time (ns)30
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-65
Maximum Continuous Drain Current (A)0.3
Operating Junction Temperature (°C)-65 to 150
Typical Input Capacitance @ Vds (pF)31@10V
Typical Reverse Recovery Charge (nC)30
Maximum Drain Source Resistance (MOhm)5000@10V
Maximum Gate Source Leakage Current (nA)100
Maximum Positive Gate Source Voltage (V)30
Maximum Pulsed Drain Current @ TC=25°C (A)1.2
Typical Reverse Transfer Capacitance @ Vds (pF)3.5@10V
Maximum Junction Ambient Thermal Resistance on PCB (°C/W)350
Description
Trans MOSFET N-CH 60V 0.3A 3-Pin SOT-23 T/R
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