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2N7000
2N7000
MOSFETs 2N7000
onsemi
2N7000
--
Diodes, Transistors and Thyristors
MOSFETs
2N7000.pdf
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSCompliant
MountingThrough Hole
ECCN (US)EAR99
PackagingBag
Pin Count3
AutomotiveNo
Lead ShapeThrough Hole
PCB changed3
Part StatusActive
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle
Package Width4.19(Max)
Package Height5.33(Max)
Package Length5.2(Max)
Product CategorySmall Signal
Supplier PackageTO-92
Maximum IDSS (uA)1
Process TechnologyDMOS
Standard Package NameTO-92
Number of Elements per Chip1
Maximum Power Dissipation (mW)400
Maximum Gate Source Voltage (V)±20
Typical Output Capacitance (pF)11
Typical Turn-On Delay Time (ns)10(Max)
Maximum Drain Source Voltage (V)60
Typical Gate Plateau Voltage (V)4.5
Typical Turn-Off Delay Time (ns)10(Max)
Maximum Gate Threshold Voltage (V)3
Minimum Gate Threshold Voltage (V)0.8
Typical Gate Threshold Voltage (V)2.1
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)0.2
Operating Junction Temperature (°C)-55 to 150
Typical Input Capacitance @ Vds (pF)20@25V
Maximum Drain Source Resistance (mOhm)5000@10V
Maximum Gate Source Leakage Current (nA)10
Maximum Positive Gate Source Voltage (V)20
Maximum Pulsed Drain Current @ TC=25°C (A)0.5
Typical Reverse Transfer Capacitance @ Vds (pF)4@25V
Description
Trans MOSFET N-CH 60V 0.2A 3-Pin TO-92 Bag
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